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Product Detailed Parameters
- Description：IGBT NPT 600V 13A D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：26 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 5A
- Power - Max：90 W
- Switching Energy：110µJ (on), 135µJ (off)
- Input Type：Standard
- Gate Charge：18.2 nC
- Td (on/off) @ 25°C：25ns/215ns
- Test Condition：400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：70 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRGS6B60KDTRRP is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) non-punch-through IGBT technology and features a D2PAK (TO-263-3) surface-mount package. The device supports a collector-to-emitter voltage of 600V, with continuous collector currents of 18A at 25°C and 10A at 100°C case temperature. It offers a maximum power dissipation of 90W at 25°C and includes 10μs short-circuit capability.
Feature Summary
- Low VCE(on) Non Punch Through IGBT Technology
- Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE(on) Temperature Coefficient
Applications
- Motor Control
- Switch Mode Power Supplies
- High Frequency Inverters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and lead-free status. Confirm availability through authorized distributors as supply chain conditions may vary. Ensure component authenticity by checking manufacturer markings and datasheet alignment before integration into production designs.
Selection Notes
Select this component for applications requiring high efficiency and rugged transient performance. The positive VCE(on) temperature coefficient facilitates excellent current sharing in parallel operation. Evaluate thermal resistance parameters relative to the intended heat sinking strategy to ensure junction temperatures remain within the specified operating range during continuous duty cycles.
Part Context
This part belongs to the IRG6B/IRGS6B series of IGBTs designed for industrial markets. It integrates a fast recovery anti-parallel diode within a single TO-263 package. The series is engineered to provide benchmark efficiency for motor control systems while maintaining low electromagnetic interference through optimized switching characteristics.
Replacement Considerations
Consult official replacement guides for cross-references. Verify pinout compatibility and electrical ratings match the original design requirements when substituting.
