SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRGSL15B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features an integrated ultrafast soft recovery anti-parallel diode and is housed in a SUPER-247 surface-mount package. The device supports a maximum collector-emitter voltage of 600V and a continuous collector current of 15A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20V, a typical saturation voltage of 1.8V at 15A, and a maximum power dissipation of 135W. The component operates within a junction temperature range of -55°C to +175°C.
Verify the manufacturer designation on the datasheet, as International Rectifier operations were acquired by Infineon Technologies. Confirm that the suffix 'PBF' indicates lead-free compliance according to RoHS standards. Ensure the ordering code matches the specific thermal and electrical requirements of the target design before procurement.
Select this component for applications requiring moderate current handling up to 15A with a 600V blocking capability. The SUPER-247 package facilitates surface-mount assembly while providing adequate thermal management. Evaluate the trade-off between the low saturation voltage and switching speed based on the specific efficiency targets of the circuit design.
This IGBT belongs to the IRGSL series, which utilizes field-stop trench technology. This generation of devices offers improved switching characteristics compared to older planar technologies. The SUPER-247 package provides a compact footprint suitable for modern power electronics designs requiring high power density.
Direct replacements may include other 600V, 15A IGBTs in the SUPER-247 package from Infineon or other manufacturers. Verify pinout compatibility and ensure that the replacement device meets or exceeds the required Vce(sat) and switching time specifications. Cross-reference with the official Infineon selection guide for equivalent performance.