IRGSL4B60KD1PBF

IRGSL4B60KD1PBF

$0.88
  • Description:IGBT NPT 600V 11A TO-262
  • Series:-

SKU:eca5e3dd5458 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 11A TO-262
  • Series:-
  • Mfr:International Rectifier
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):11:00 AM
  • Current - Collector Pulsed (Icm):22 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 4A
  • Power - Max:63 W
  • Switching Energy:73µJ (on), 47µJ (off)
  • Input Type:Standard
  • Gate Charge:12 nC
  • Td (on/off) @ 25°C:22ns/100ns
  • Test Condition:400V, 4A, 100Ohm, 15V
  • Reverse Recovery Time (trr):93 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:TO-262
  • Grade:-
  • Qualification:-

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IRGSL4B60KD1PBF

Overview

The IRGSL4B60KD1PBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features an integrated ultrafast soft recovery anti-parallel diode within the SUPER-247 package. The device supports a collector-emitter voltage of 600V and a continuous collector current of 12A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.3V, a gate-emitter threshold voltage range of 3.0V to 5.5V, and a maximum fall time of 89ns. It operates with a junction temperature up to 175°C.

Feature Summary

  • Integrates an ultrafast soft recovery diode for efficient commutation
  • Utilizes low-loss IGBT technology for reduced conduction losses
  • Designed for high reliability in hard-switching applications

Applications

  • Discrete IGBT comparison circuits
  • Three-phase motor drive inverters
  • High-frequency power switching systems

Procurement Notes

Verify the component against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the specific suffix matches the required lead-free specifications. Cross-reference manufacturer documentation for any updates regarding RoHS compliance or material declarations before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 600V rating with moderate current handling capabilities. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal management requirements based on the specified power dissipation limits and ensure the driving circuitry aligns with the gate threshold voltage specifications.

Part Context

This part belongs to the IGBT discrete transistor family from International Rectifier, now part of Infineon Technologies. It is designed for general-purpose power switching applications where efficiency and switching speed are critical. The SUPER-247 package provides robust mechanical stability and effective heat dissipation for through-hole mounting.

Replacement Considerations

Official substitutes include the IRGB4B60KD1 and IRGB4B60KD1PBF. Verify that replacement parts maintain identical voltage, current, and package specifications to ensure functional equivalence.

IRGSL4B60KD1PBFIRGSL4B60KD1PBF
$0.88
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