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IRL1104PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 104A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRL1104PBF
- Description：MOSFET N-CH 40V 104A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3445 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRL1104PBF
Single FETs, MOSFETs Overview
The IRL1104PbF is a Fifth Generation HEXFET® N-channel power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). It features logic-level gate drive capability and ultra-low on-resistance. Key electrical parameters include a drain-to-source voltage of 40V, a continuous drain current of 104A at 25°C case temperature, and a maximum RDS(on) of 8mΩ at VGS=10V. The device supports a junction temperature range of -55°C to +175°C and utilizes a TO-220AB package.
Single FETs, MOSFETs Feature Summary
- Logic-Level Gate Drive for direct microcontroller interfacing
- Ultra-Low On-Resistance for high efficiency
- Fast Switching Speeds with dynamic dv/dt rating
- Fully Avalanche Rated ruggedness
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin as Infineon Technologies, noting the historical association with International Rectifier. Confirm the lead-free status indicated by the PbF suffix and ensure the TO-220AB package dimensions match JEDEC standards. Check for RoHS compliance documentation specific to this part number before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low gate charge and high current handling in a 40V environment. The logic-level threshold allows for efficient drive from standard 5V or 3.3V logic sources. Ensure thermal management design accounts for the 0.9 K/W junction-to-case thermal resistance to maintain operation within the specified 175°C limit.
Single FETs, MOSFETs Part Context
This part belongs to the Fifth Generation HEXFET® family, utilizing advanced processing techniques to minimize silicon area per ohm of resistance. It represents a transition period product where manufacturing rights moved from International Rectifier to Infineon Technologies.
Single FETs, MOSFETs Replacement Considerations
IRL1104PBF
Single FETs, MOSFETs FAQ
What is the maximum gate-to-source voltage?
The absolute maximum rating for gate-to-source voltage is ±16V.
Is the device suitable for automotive use?
The provided datasheet does not specify an automotive quality grade; it is rated for commercial-industrial applications up to 175°C junction temperature.
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