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IRLBA1304P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 185A SUPER-220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRLBA1304P
- Description：MOSFET N-CH 40V 185A SUPER-220
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 110A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：7660 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：SUPER-220™ (TO-273AA)
- Package / Case：TO-273AA
Single FETs, MOSFETs datasheet and documents for IRLBA1304P
Single FETs, MOSFETs Overview
The IRLBA1304P is an N-Channel Power MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a 40V repetitive peak reverse voltage and supports a continuous drain current of 185A at case temperature. The device is housed in the SUPER-220 (TO-273AA) through-hole package, designed for high-power applications requiring robust thermal performance and low on-resistance characteristics.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced HEXFET power MOSFET technology for enhanced efficiency
- Designed for high-current switching applications with superior thermal stability
- Features a rugged through-hole package suitable for high-power dissipation
Single FETs, MOSFETs Applications
- High-current DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and manufacturer origin, as historical data indicates production by International Rectifier prior to acquisition. Confirm the package type matches the required SUPER-220 footprint. Ensure the component meets the necessary automotive or industrial qualification standards if applicable to the end application.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling in a through-hole configuration. Compare the on-resistance and thermal resistance values against alternative packages like TO-247 for space-constrained layouts. Ensure the gate drive voltage aligns with the logic-level requirements for optimal conduction.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs, known for low on-resistance and fast switching speeds. Originally manufactured by International Rectifier, it is now part of Infineon's portfolio. The SUPER-220 package provides a balance between current capacity and mounting simplicity for industrial equipment.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains the same thermal resistance and package dimensions to ensure mechanical fit without PCB redesign.
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