IRLHS6276TRPBF

FET, MOSFET Arrays Overview

The IRLHS6276TRPBF is a dual N-channel HEXFET power MOSFET in a PQFN 2x2mm package. It features a drain-source voltage of 20V and a continuous drain current of 3.4A at 25°C case temperature. The maximum on-resistance is 45mΩ at VGS=4.5V and 62mΩ at VGS=2.5V. Gate threshold voltage ranges from 0.5V to 1.1V, with a total gate charge of 3.1nC at VDS=10V. Power dissipation is 1.5W at 25°C ambient, with an operating junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration within a compact PQFN 2x2mm footprint
• Logic level gate drive capability for direct microcontroller interfacing
• Low thermal resistance to the PCB bottom surface for efficient heat dissipation
• RoHS compliant construction free of lead, bromide, and halogen

FET, MOSFET Arrays Applications

• Low voltage synchronous rectification circuits
• DC-DC converter output stages
• Load switching applications requiring logic-level control

FET, MOSFET Arrays Procurement Notes

Verify the component against official Infineon datasheets to confirm electrical parameters match design requirements. Ensure the ordering suffix corresponds to the tape and reel packaging format. Confirm compliance with RoHS directives and industrial qualification standards before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low on-resistance in minimal space. Evaluate thermal performance based on the specific PCB copper area available for heat sinking. Verify that the gate drive voltage meets the minimum threshold for full enhancement across the expected operating temperature range.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a Dual PQFN 2mm x 2mm package. The product is qualified to Industrial level standards per JEDEC guidelines.

FET, MOSFET Arrays Replacement Considerations

IRLHS6276TR2PBF

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage is ±12V.

Does the device include an integrated body diode?

Yes, it contains an integral reverse p-n junction diode between the source and drain.

What is the typical reverse recovery time of the body diode?

The typical reverse recovery time is 5.2ns, with a maximum of 7.8ns.