IRLR3717PBF

Description：MOSFET N-CH 20V 120A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:a4a5b10d1d15 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLR3717PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 120A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR3717PBF

Description：MOSFET N-CH 20V 120A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2830 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：89W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR3717PBF

IRLR3717PBF

Single FETs, MOSFETs Overview

The IRLR3717PBF is a single N-channel HEXFET power MOSFET in a D-Pak (TO-252) surface-mount package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 120A at 25°C case temperature. The device exhibits a typical on-resistance of 3.4mΩ at VGS=10V, rising to 5.5mΩ at VGS=4.5V. Total gate charge is typically 21nC at VGS=10V. Maximum power dissipation reaches 89W at 25°C with a junction-to-case thermal resistance of 1.69°C/W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Very low RDS(on) at 4.5V VGS
Ultra-low gate impedance
Fully characterized avalanche voltage and current

Single FETs, MOSFETs Applications

High frequency synchronous buck converters for computer processor power
High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use

Single FETs, MOSFETs Procurement Notes

Verify the component manufacturer as Infineon Technologies or International Rectifier, noting that IR was acquired by Infineon. Confirm the lead-free status indicated by the 'P' suffix and ensure the D-Pak physical dimensions match the EIA-481 standard. Validate the datasheet revision date against the specific production lot to ensure parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at moderate gate drive voltages. The 20V rating suits low-voltage bus architectures. Evaluate the thermal management requirements based on the 1.69°C/W junction-to-case resistance. Ensure the switching frequency aligns with the 21nC gate charge to minimize driver losses.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family, utilizing advanced processing techniques to achieve low on-resistance per silicon area. The D-Pak package supports vapor phase, infrared, or wave soldering. It is designed for high-efficiency power conversion where fast switching and ruggedized device design are critical for system reliability.