IRLR7807ZCTRRP

Single FETs, MOSFETs Overview

The IRLR7807ZCTRRP is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 43 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 13.8 mΩ at 10 V gate drive and 18.2 mΩ at 4.5 V. Total gate charge (QG) is typically 7 nC at 4.5 V, with a gate-drain charge (Qgd) of 2.7 nC. Power dissipation reaches 40 W, supported by a thermal resistance junction-to-case (RthJC) of 3.75 K/W. The component operates within a junction temperature range up to 175°C and utilizes a DPAK (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced HEXFET technology for low on-resistance and fast switching performance
• Designed for high-efficiency power management applications with minimal conduction losses
• Robust thermal characteristics support operation in demanding environments

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against official Infineon documentation to ensure functional equivalence, as ordering suffixes may indicate variations in packaging or tape-and-reel specifications. Confirm that the procurement source provides valid traceability and authenticity guarantees, particularly given the component's lifecycle status. Cross-reference the part number with the latest datasheet revisions to ensure compliance with current technical standards and regulatory requirements before finalizing acquisition.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low gate charge and high current handling in a compact surface-mount form factor. Evaluate the thermal management strategy to maintain junction temperatures within the specified 175°C limit under full load conditions. Ensure the driving circuit can provide sufficient gate voltage to achieve the minimum on-resistance values specified in the electrical characteristics table. Consider the package's thermal dissipation capabilities relative to the expected power loss during operation.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs, known for combining low RDS(on) with fast switching speeds. The IRLR7807ZCTRRP variant specifically targets applications where efficiency and thermal performance are critical. It represents a standard offering in the company's discrete power semiconductor portfolio, designed to replace older generations of similar voltage-rated devices with improved electrical parameters.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components by matching key electrical parameters such as VDS, ID, RDS(on), and package type. Consult official cross-reference tools or manufacturer guidelines for validated replacements.