IRLR8103

$1.79

Description：MOSFET N-CH 30V 89A D-PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:19441bf6c9ff Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLR8103 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 89A D-PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR8103

Description：MOSFET N-CH 30V 89A D-PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：89A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：89W (Ta)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR8103

IRLR8103

Single FETs, MOSFETs Overview

The IRLR8103 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 30V drain-source voltage rating and an 89A continuous drain current capability at 25°C. The device exhibits a typical on-resistance of 6mΩ at VGS=10V and a total gate charge of 45nC. Designed for surface mount applications, it utilizes the DPAK (TO-252AA) package with a maximum junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized for high efficiency DC-DC converters powering microprocessors
Provides exceptionally low on-resistance and high Cdv/dt turn-on immunity
Minimizes component count in parallel high-current applications

Single FETs, MOSFETs Applications

CPU core DC-DC converters
Synchronous buck converter applications
High current parallel switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source, as the datasheet originates from International Rectifier prior to its acquisition by Infineon. Confirm that the part number matches the exact specifications required for your synchronous FET application, particularly regarding the 6mΩ on-resistance and 45nC gate charge values.

Single FETs, MOSFETs Selection Notes

Select this component when designing synchronous buck converters requiring minimal conduction losses and robust immunity against Cdv/dt-induced turn-on. It is specifically optimized for control FETs where low switching loss is critical compared to standard logic-level devices.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET chipset family designed specifically for DC-DC converters. It is engineered to balance on-resistance and gate charge, offering superior performance over general-purpose MOSFETs in high-frequency switching environments.