IRLU014PBF

$0.87

Description：MOSFET N-CH 60V 7.7A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:de23bfb48d9c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRLU014PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 7.7A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLU014PBF

Description：MOSFET N-CH 60V 7.7A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251AA
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRLU014PBF

IRLU014PBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRLU014PBF is a third-generation N-channel power MOSFET designed for through-hole mounting applications. It features a straight lead configuration within the IPAK (TO-251AA) package, providing robust performance in circuits requiring logic-level gate drive and fast switching capabilities. The device offers a drain-source voltage rating of 60 V and a continuous drain current of 7.7 A at a case temperature of 25 °C. Key electrical parameters include a maximum on-resistance of 0.20 Ω specified at VGS = 5 V and a total gate charge of 8.4 nC. The component supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability allowing direct interfacing with standard logic outputs
Fast switching characteristics optimized for high-frequency power conversion applications
Ruggedized device design featuring dynamic dV/dt rating for improved reliability
Straight lead construction suitable for through-hole PCB mounting techniques

Single FETs, MOSFETs Applications

DC-DC converter circuits requiring efficient step-down or step-up regulation
Motor control systems utilizing low-voltage motor drivers
Power management modules for industrial automation equipment
Battery protection circuits in portable electronic devices

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required lead type and environmental compliance status. Confirm the specific package variant corresponds to the intended mounting method. Ensure the manufacturer documentation aligns with the requested revision level. Validate all electrical ratings against the target application requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when through-hole mounting is preferred over surface-mount alternatives within the same family. Consider the thermal resistance values when designing heat dissipation strategies for the IPAK package. Evaluate the gate charge specifications to ensure compatibility with available driver circuitry. Assess the continuous current derating curves relative to the expected operating ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the IRLU series of third-generation power MOSFETs manufactured by Vishay Siliconix. It shares core electrical characteristics with the IRLR014 but differs in physical packaging to accommodate through-hole assembly processes. The series represents a balance between low on-resistance and cost-effectiveness for general-purpose power switching applications.