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ISA170170N04LMDSXTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is ISA170170N04LMDSXTMA1. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for ISA170170N04LMDSXTMA1
- Description：ISA170170N04LMDSXTMA1
- Series：OptiMOS™ 3
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 9.6A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 20V
- Power - Max：1.4W (Ta), 2.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8-920
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for ISA170170N04LMDSXTMA1
FET, MOSFET Arrays Overview
The ISA170170N04LMDSXTMA1 is a dual N-channel OptiMOS™ 3 power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 17 mΩ at 10 V gate drive and supports a continuous drain current of 9.6 A at 25 °C. The device utilizes PG-DSO-8 packaging, operates within a temperature range of -55 °C to 150 °C, and includes an internal body diode.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a single package
- Logic level gate threshold for direct microcontroller interfacing
- Superior thermal resistance characteristics
- 100% avalanche tested for robustness
FET, MOSFET Arrays Applications
- High-side and low-side switching applications
- DC-DC converter circuits
- Motor control systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all applicable JEDEC standards and RoHS compliance requirements relevant to your manufacturing environment before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual MOSFET solution is required for 40 V logic-level switching applications. Evaluate the 17 mΩ on-resistance and 9.6 A current capability against your circuit's thermal dissipation limits and PCB footprint constraints to ensure optimal performance.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS™ 3 family of power transistors designed by Infineon Technologies. These devices are engineered to provide high efficiency and reliability in power conversion applications, utilizing advanced trench technology to minimize conduction losses while maintaining excellent switching performance.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists or datasheets for compatible alternatives such as the IRF7910 or IRF8910G. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting any other dual N-channel MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
