ISA170230C04LMDSXTMA1

FET, MOSFET Arrays Overview

The ISA170230C04LMDSXTMA1 is a dual OptiMOS™ 3 power transistor in a PG-DSO-8 package, integrating complementary N-channel and P-channel MOSFETs. The N-channel device offers a maximum drain-source voltage of 40 V, a continuous drain current of 9.6 A at 25°C, and a typical on-resistance of 17 mΩ. The P-channel counterpart provides a breakdown voltage of -40 V, a continuous drain current of -8.8 A, and a typical on-resistance of 23 mΩ. Both channels operate within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N- and P-channel integration for simplified high-side and low-side switching designs
• Very low on-resistance characteristics to minimize conduction losses
• Superior thermal resistance capabilities for efficient heat dissipation
• Qualified according to JEDEC standards with 100% avalanche testing

FET, MOSFET Arrays Applications

• Power block configurations requiring integrated switching pairs
• Motor drive solutions utilizing half-bridge topologies
• DC-DC converter circuits needing compact dual-transistor implementations

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-DSO-8 footprint dimensions and pinout configuration required by the target PCB layout. Cross-reference the final datasheet revision date to validate electrical parameter consistency before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a matched pair of N- and P-channel transistors is required in a single surface-mount package. It is suitable for applications demanding low on-resistance and robust thermal performance within a 40 V system. Consider the gate charge requirements and switching speeds relative to the driving circuit capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 3 family of power transistors designed for general-purpose switching applications. It utilizes Infineon's trench technology to achieve high efficiency and reliability. The dual configuration reduces board space compared to discrete components while maintaining standardized industrial pin arrangements.

FET, MOSFET Arrays Replacement Considerations

ISA170170N04LMDSXTMA1

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-channel?

The maximum continuous drain current for the N-channel is 9.6 A at a case temperature of 25°C.

Does the device include internal body diodes?

Yes, both the N-channel and P-channel devices feature internal body diodes as indicated in the pinout diagram.

What is the operating temperature range?

The operating and storage temperature range is from -55°C to +150°C.