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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ISC014N08NM6ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 6 family, designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 279 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1.45 mΩ at Vgs = 10 V, with a typical gate charge (Qg) of 79 nC. Operating within a temperature range of -55°C to +175°C, it utilizes the SuperSO8 5x6 package to facilitate efficient thermal management through dual-side cooling capabilities inherent to the OptiMOS 6 technology.
Feature Summary
- OptiMOS 6 technology delivers superior figure-of-merit through minimized on-resistance and gate charge products.
- SuperSO8 5x6 package enables dual-side cooling for enhanced thermal performance in compact designs.
- Robust avalanche capability supports reliable operation under transient overload conditions.
Applications
- High-frequency synchronous rectification in DC-DC converters
- Power factor correction circuits in industrial power supplies
- Motor control systems requiring low conduction losses
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number with official Infineon documentation. Ensure the ordering suffix matches the specified reel or cut-tape packaging requirements. Confirm RoHS compliance status and check for any specific handling instructions related to the SuperSO8 package during assembly processes.
Selection Notes
Select this component when designing circuits requiring low conduction losses at 80 V ratings. Compare the Rds(on) and Qg values against alternative packages to optimize efficiency. Consider the thermal resistance characteristics of the SuperSO8 package relative to the expected power dissipation and ambient operating conditions.
Part Context
This part belongs to the OptiMOS 6 series, representing advanced silicon MOSFET technology from Infineon Technologies. It succeeds previous generations like OptiMOS 4 and 5, offering improved switching speeds and lower losses. The ISC prefix indicates an industrial-grade classification within the broader portfolio of 80 V N-channel devices.
Replacement Considerations
Direct substitutes include other OptiMOS 6 variants such as ISC018N08NM6SC for dual-side cooling applications or ISC031N08NM6ATMA1 for higher current requirements. Verify pin compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent electrical parameters meet design specifications.
