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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ISC031N08NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 6 product family. It features a drain-source voltage (VDS) of 80 V and a maximum on-resistance (RDS(on)) of 3.15 mΩ at VGS = 10 V. The device supports a continuous drain current (ID) of 127 A and operates with a gate threshold voltage range of 2.4 V to 3.5 V. Key electrical parameters include a total gate charge (Qg) of 57 nC measured between 0 V and 4.5 V, and a reverse transfer charge (Qoss) of 33 nC. It utilizes a TDSON-8FL surface-mount package and is rated for junction temperatures up to 175 °C.
Feature Summary
- Optimized for high-performance switching mode power supplies (SMPS) with superior thermal resistance characteristics.
- Logic-level operation enabled by low gate threshold voltage requirements for efficient drive compatibility.
- High reliability ensured through 100% avalanche testing during manufacturing validation.
Applications
- High-efficiency synchronous rectification in DC/DC converters.
- Power stages for point-of-load (POL) regulation modules.
- General-purpose switching applications in industrial power systems.
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number ISC031N08NM6ATMA1 with official Infineon documentation. Confirm that the received units match the specified OptiMOS 6 technology and TDSON-8FL packaging. Ensure compliance with RoHS directives and halogen-free standards as defined in the product data sheet prior to integration into production lines.
Selection Notes
Select this component when designing circuits requiring low conduction losses at 80 V ratings. The specific RDS(on) and Qg values indicate suitability for high-frequency switching environments where efficiency is critical. Compare these parameters against alternative OptiMOS 6 variants to ensure the chosen device meets the specific thermal and electrical demands of the target application design.
Part Context
This component is part of the OptiMOS 6 portfolio, which represents advanced silicon technology for power switching. The series focuses on minimizing figure-of-merit (FOM) products of on-resistance and gate charge. This specific part number denotes the tape-and-reel packaging variant intended for automated surface-mount assembly processes in high-volume manufacturing environments.
Replacement Considerations
Direct substitutes within the same family include IQE031N08LM6CGATMA1, which offers similar electrical performance but utilizes a PG-WHTFN-9 package. When replacing ISC031N08NM6ATMA1, verify footprint compatibility due to the difference between TDSON-8FL and PG-WHTFN-9 packages. Ensure that thermal management solutions are adjusted if the replacement package exhibits different thermal resistance characteristics.
