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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ISC151N08NM6ATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 6 product family. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 142 A at 25°C. The device exhibits a maximum on-state resistance (Rds(on)) of 1.51 mΩ at a gate-source voltage of 10 V. Packaged in a PG-TDSON-8 surface-mount format, it supports a junction temperature range from -55°C to +175°C. Key electrical parameters include a gate charge (Qg) of 39 nC at 10 V and a threshold voltage (Vgs(th)) typically around 3.5 V.
Feature Summary
- Optimized figure-of-merit (FOM) balancing low on-resistance with minimal gate charge for efficient switching.
- Enhanced ruggedness characterized by high avalanche energy capability for robust operation under transient stress.
- Designed for synchronous rectification applications with minimized reverse recovery charge (Qrr).
- Utilizes advanced planar trench technology to achieve superior thermal performance and low conduction losses.
Applications
- High-efficiency DC/DC converters and point-of-load regulation modules.
- Synchronous rectification stages in AC/DC power supplies.
- Motor control systems and industrial drive inverters.
- Automotive electronics requiring high reliability and thermal stability.
Procurement Notes
Verify the complete part number against official Infineon documentation to ensure correct suffix identification. Confirm package type and tape/reel specifications match design requirements. Check RoHS compliance status and lead time availability through authorized distribution channels prior to ordering.
Selection Notes
Select this component based on the required 80 V rating and 1.51 mΩ on-resistance target. Evaluate thermal management needs relative to the 142 A current rating and package dissipation capabilities. Ensure gate drive voltage compatibility with the specified threshold and charge characteristics for optimal switching performance.
Part Context
This device is part of the OptiMOS 6 generation, representing a specific iteration of Infineon's planar trench technology. It targets applications demanding high current density within compact surface-mount footprints. The model distinguishes itself within the 80 V class by offering a balance between conduction efficiency and switching speed suitable for modern power conversion topologies.
Replacement Considerations
Direct replacements should be sought within the OptiMOS 6 family or compatible OptiMOS generations with identical pinouts. Verify that substitute parts meet or exceed the 80 V breakdown voltage and 1.51 mΩ Rds(on) specifications. Cross-reference thermal resistance values to ensure equivalent heat dissipation performance in the existing PCB layout.
