SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ISL9V2040S3ST is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the EcoSPARK series, manufactured by onsemi. It features a maximum continuous collector current of 10 A and a collector-emitter voltage rating of 390 V to 430 V. The device is housed in a surface-mount TO-263AB (D2PAK-3) package with three pins. Key electrical parameters include a maximum power dissipation of 130 W, a collector-emitter saturation voltage of 1.9 V, and a gate-emitter voltage limit of ±10 V. It operates within a temperature range of -40°C to +175°C and carries RoHS certification.
Verify the manufacturer designation carefully, as listings may attribute this part to Rochester Electronics or onsemi. Confirm the specific voltage rating variant (390 V vs 430 V) matches the circuit requirements. Ensure the TO-263AB package type is compatible with the intended PCB footprint and thermal management strategy before procurement.
Select this component for applications requiring a 10 A current capacity with moderate voltage blocking capabilities. The TO-263AB package provides a balance between thermal performance and space efficiency. Consider the 1.9 V saturation voltage for conduction loss calculations and ensure the driving circuit can support the specified ±10 V gate-emitter voltage limits safely.
This IGBT belongs to the EcoSPARK family, which focuses on improving efficiency in power conversion. The part number suffix 'S3ST' typically denotes the specific package style and tape-and-reel packaging format. It serves as a discrete switching element in medium-power electronic circuits.
Check for direct equivalents within the same EcoSPARK series or other 10A/400V class IGBTs in the TO-263 package. Verify pinout compatibility and thermal resistance values when substituting.