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The ISL9V3036P3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the EcoSPARK series, manufactured by onsemi. It features a collector-emitter breakdown voltage of 360 V and a maximum continuous collector current of 30 A at 25°C. The device utilizes a TO-220 package for through-hole mounting and supports a maximum power dissipation of 175 W. It operates within a junction temperature range of -40°C to 175°C and meets AEC-Q101 automotive qualification standards.
Verify the manufacturer designation carefully, as the part number prefix indicates an onsemi product despite historical Fairchild Semiconductor branding. Confirm the specific suffix matches the required packaging configuration. Ensure compliance with RoHS directives and check for any recent production lifecycle changes or obsolescence notices before finalizing procurement plans.
Select this component when a 360 V rating and 30 A continuous current capability are required in a standard TO-220 footprint. Consider the thermal resistance values provided in the datasheet to determine appropriate heatsinking requirements. Verify that the gate charge specifications align with the driving circuit's capabilities for optimal switching performance.
This IGBT belongs to the EcoSPARK family, designed for low-loss applications. While originally associated with Fairchild Semiconductor, the part is now produced and distributed by onsemi following corporate acquisitions. The device represents a transition point in the product lineage, maintaining identical electrical specifications while updating manufacturing sources.
Direct substitutes include the ISL9V3036S3ST for surface mount applications and the ISL9V5036P3-F085 for higher current requirements. Cross-reference pinouts and thermal characteristics to ensure compatibility with existing board layouts and cooling solutions.