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Product Detailed Parameters
- Description：IGBT, 360V, 17A, 1.58V, 300MJ, D
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ISL9V3036S3ST is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the ecospark® series, manufactured by onsemi. It features a maximum collector-emitter voltage of 360 V and a continuous collector current of 21 A at 25°C. The device is housed in a surface-mount TO-263 (D2PAK) package with two leads and a tab. Key electrical characteristics include a gate charge of 17 nC and a maximum collector-emitter saturation voltage of 1.6 V at 4 V gate drive and 6 A collector current. It operates within a junction temperature range of -40°C to 175°C and has a maximum power dissipation of 150 W.
Feature Summary
- High switching speed performance with low gate charge for efficient drive requirements
- Robust thermal management capability via exposed tab design in D2PAK package
- Low saturation voltage for reduced conduction losses in high-current applications
Applications
- Motor control systems requiring high efficiency and compact form factor
- Switch-mode power supplies (SMPS) and DC-DC converters
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the manufacturer designation carefully, as the part number originates from Intersil but is now produced by onsemi. Confirm the specific suffix or tape-and-reel variant matches your assembly line requirements. Check component status, as this item may be classified as obsolete or not recommended for new designs depending on the current production cycle.
Selection Notes
Select this IGBT when a 360 V rating is sufficient and space constraints favor a surface-mount D2PAK package over through-hole alternatives. Ensure the driving circuit can provide the necessary 4 V to 15 V gate voltage swing. Evaluate thermal resistance parameters against your heatsink solution to maintain junction temperatures within the specified 175°C limit under peak load conditions.
Part Context
This component belongs to the ecospark® family, which focuses on high-efficiency switching devices. While originally developed by Intersil, the product line and manufacturing have been integrated into onsemi's portfolio. The ISL prefix indicates its historical origin, while the technical specifications align with modern medium-power IGBT standards for industrial and consumer electronics.
Replacement Considerations
Direct cross-reference requires checking pinout compatibility and electrical ratings against onsemi equivalents such as the FGA25N32ANTD or similar 360V/25A D2PAK IGBTs. Verify that any substitute maintains the same gate charge and saturation voltage profiles to ensure circuit stability without redesigning the gate driver network.
