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The ISL9V3040S3S is a 400 V, N-channel ignition Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It belongs to the EcoSPARK series and features an integrated internal diode for voltage clamping without external components. The device offers a short-circuit withstand energy of 300 mJ at 25°C junction temperature and supports logic-level gate drive. It is housed in a D²-Pak (TO-263) plastic package.
Verify the manufacturer designation carefully, as this component was originally developed by Fairchild Semiconductor and is now distributed by onsemi. Confirm that the specific suffix matches the required package type and ensure compliance with current automotive qualification standards before procurement.
Select this IGBT for high-reliability automotive ignition systems requiring robust short-circuit immunity. The 300 mJ SCIS rating ensures durability under fault conditions. Ensure the driving circuitry supports the specified logic-level gate requirements for optimal switching performance.
This component is part of the EcoSPARK family of ignition IGBTs designed for automotive applications. It succeeds earlier generations by offering improved short-circuit withstand capabilities while maintaining a compact footprint suitable for modern coil-on-plug architectures.
The ISL9V3040S3ST is a verified equivalent variant within the same product family, sharing identical electrical characteristics and functionality.