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Product Detailed Parameters
- Description：IGBT 480V 51A TO-263
- Series：EcoSPARK®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：480 V
- Current - Collector (Ic) (Max)：51 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.6V @ 4V, 10A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：32 nC
- Td (on/off) @ 25°C：-/10.8µs
- Test Condition：300V, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The ISL9V5045S3ST is a 450 V, 15.5 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes the Field-Stop Trench technology to achieve low saturation voltage and optimized switching performance. The device is housed in a D2PAK (TO-263) surface-mount package with three pins. It supports a maximum power dissipation of 166.7 W and operates within a junction temperature range of -40 °C to +175 °C. The component features a maximum collector-emitter voltage of 450 V and a gate-emitter voltage rating of ±14 V.
Feature Summary
- Field-Stop Trench technology for reduced conduction losses
- High thermal stability with extended operating temperature range
- Surface-mount D2PAK package for efficient PCB integration
Applications
- Motor drive inverters
- Switched-mode power supplies
- Industrial motor control systems
Procurement Notes
Verify the manufacturer designation carefully, as the part number prefix 'ISL' typically indicates Intersil/Renesas origin rather than onsemi. Confirm the specific datasheet version and electrical characteristics match the required design parameters before procurement. Ensure the supplier provides traceable documentation to validate authenticity and technical compliance.
Selection Notes
Select this component for applications requiring high current density in a compact surface-mount form factor. Evaluate the thermal resistance of the D2PAK package against the expected power dissipation of 166.7 W. Compare the switching speed and saturation voltage against alternative IGBTs to ensure compatibility with the driver circuit requirements.
Part Context
This IGBT belongs to the family of high-power semiconductor switches designed for efficient energy conversion. Similar devices often share the D2PAK footprint but vary in voltage and current ratings. The specific combination of 450 V blocking capability and 15.5 A continuous current defines its niche in medium-power industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and electrical specifications if considering alternatives from other manufacturers.
