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IST019N08NM5AUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IST019N08NM5AUMA1
- Description：TRENCH 40<-<100V PG-HSOF-5
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：32A (Ta), 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs：132 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6600 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 313W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-HSOF-5-4
- Package / Case：5-PowerSFN
Single FETs, MOSFETs datasheet and documents for IST019N08NM5AUMA1
Single FETs, MOSFETs Overview
The IST019N08NM5AUMA1 is an N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It features a silicon technology and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a drain-source voltage (Vds) of 80 V, a continuous drain current (Id) of 290 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a typical on-resistance (Rds(on)) of 1.9 Ohms at 10 V gate drive, with a gate charge (Qg) of 94 nC. Power dissipation capability is rated at 313 W.
Single FETs, MOSFETs Feature Summary
- Single-channel N-Channel enhancement mode configuration
- Silicon-based semiconductor technology
- Surface-mount installation style for SMD/SMT applications
Single FETs, MOSFETs Applications
Single FETs, MOSFETs Procurement Notes
Verify the component status before procurement as the lifecycle indicates it is obsolete and will be discontinued by the manufacturer. Confirm package details such as Reel or Cut Tape availability through official distributors. Ensure compatibility with existing designs due to end-of-life status.
Single FETs, MOSFETs Selection Notes
Select this component based on its specific 80 V rating and high current handling capabilities. Consider the thermal management requirements associated with its 313 W power dissipation rating. Verify that the 1.9 Ohm on-resistance meets the efficiency targets for the intended circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon Technologies MOSFET product category. It is classified under Transistors and specifically designed for power switching applications requiring robust performance in automotive or industrial environments.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
