ISZ157N08NM6ATMA1

$1.23

Description：TRENCH 40<-<100V
Series：-

SKU:fa05c0f5b15a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRENCH 40<-<100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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ISZ157N08NM6ATMA1

Overview

The ISZ157N08NM6ATMA1 is an N-channel OptiMOS 6 power transistor with a drain-source voltage of 80 V. It features a maximum on-resistance of 2.5 mΩ and a continuous drain current of 37 A at case temperature. The device operates within a junction temperature range of -55 °C to +175 °C and utilizes a PG-TSDSON-8-34 surface-mount package.

Feature Summary

OptiMOS 6 technology providing very low on-resistance
Excellent gate charge versus on-resistance product
N-channel normal level configuration

Applications

DC-DC converter modules
Power supply applications
Industrial control systems

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the PG-TSDSON-8-34 footprint matches the target PCB design requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring an 80 V rating with low conduction losses in a compact surface-mount form factor. Ensure thermal management strategies account for the specified power dissipation limits in both ambient air and case cooling scenarios.

Part Context

This part belongs to the OptiMOS 6 family, which integrates advanced trench gate technologies. It serves as a single N-channel enhancement mode MOSFET designed for high-efficiency switching applications where size and thermal performance are critical constraints.