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The IXYS ITF38IF1200HJ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 38 A at 25°C. The device operates within a temperature range of -40°C to +150°C junction temperature. Packaged in an ISOPLUS247-3 through-hole housing, it offers a typical saturation voltage of 1.9 V and a turn-off time of approximately 160 ns. This component is designed for high-voltage power switching applications requiring robust performance.
Verify the specific suffix HJ against official datasheets to confirm pinout and thermal specifications. Check manufacturer notices for end-of-life status or lifecycle changes before finalizing procurement plans. Ensure compatibility with existing driver circuits regarding gate threshold requirements.
Select this component when a 1200 V rating and 38 A current capacity are required in a TO-247 style package. Compare saturation voltage and switching speed against alternative trench IGBTs for efficiency optimization. Confirm thermal resistance values match the intended heatsinking strategy for reliable operation under load.
This part belongs to the ITF series of Trench IGBTs from IXYS. It shares architectural similarities with other high-voltage discrete IGBTs but is distinguished by its specific current rating and packaging configuration. The series targets industrial power conversion markets.
Direct substitutes may include other 1200 V, 38 A Trench IGBTs in ISOPLUS247 packages. Verify electrical parameters such as Vce(sat) and switching times carefully. Mechanical footprint compatibility must be confirmed before substitution.