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The ITF48IF1200HR is a Trench IGBT manufactured by IXYS, designed for high-voltage power switching applications. It features a collector-emitter breakdown voltage (Vceo) of 1200 V and supports a continuous collector current (Ic) of 48 A at 25°C. The device utilizes XPT technology to optimize the trade-off between conduction losses and switching performance. Key electrical parameters include a maximum collector-emitter saturation voltage (Vcesat) of 1.8 V and a gate-emitter leakage current of 500 nA. The component operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247-3 package.
Verify the specific suffix HR against the official datasheet to confirm pinout compatibility and packaging details. Ensure that the sourcing channel provides valid traceability documentation. Cross-reference the manufacturer's latest notices to confirm current production status and availability constraints before finalizing procurement plans.
Select this component when a 1200 V rating and approximately 48 A continuous current capacity are required. Consider the 1.8 V saturation voltage for conduction loss calculations. Verify that the TO-247-3 package fits the thermal management design. Compare switching times against system requirements to ensure adequate performance margins.
This part belongs to the ITF series of Trench IGBTs from IXYS. It shares the 1200 V family classification with other models like ITF86110DK8T but differs significantly in current handling capabilities. The series is characterized by the integration of trench gate structures for improved speed and reduced on-state voltage drop compared to older planar technologies.
Direct substitutes may include other 1200 V, ~50 A Trench IGBTs in TO-247 packages. Verify pin compatibility and thermal resistance values. Check for equivalent Vcesat and switching energy specifications to maintain circuit performance.