IV1Q12160D7Z

$6.26

Description：SIC MOSFET, 1200V 160MOHM, TO263
Series：-
Mfr：Inventchip
Package：Tube

SKU:095062f157ac Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12160D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 160MOHM, TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12160D7Z

Description：SIC MOSFET, 1200V 160MOHM, TO263
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：885 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：108W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV1Q12160D7Z

IV1Q12160D7Z

Single FETs, MOSFETs Overview

The IV1Q12160D7Z is a 1200V N-channel Silicon Carbide (SiC) MOSFET manufactured by Inventchip. It features a maximum drain-source voltage of 1200V and a typical on-resistance of 160mΩ at 25°C, rising to 195mΩ at 25°C under 10A/20V conditions. The device supports a continuous drain current of 19A at 25°C case temperature and handles a pulsed current of 47.5A. Total gate charge is 43nC. It operates within a junction temperature range of -55°C to 175°C and utilizes a TO-263-7 package.

Single FETs, MOSFETs Feature Summary

Low impedance package with driver source pin
High blocking voltage with low on-resistance
High speed switching with low capacitance
Very fast and robust intrinsic body diode

Single FETs, MOSFETs Applications

Solar inverters
EV battery chargers
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision date against the manufacturing batch to ensure alignment with the latest electrical characteristics and thermal data. Confirm that the TO-263-7 package dimensions match the target PCB footprint requirements. Ensure the application circuit design accommodates the recommended turn-on voltage of 20V and the negative turn-off voltage specifications for optimal switching performance.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage operation up to 1200V is required alongside low conduction losses in SiC technology. The TO-263-7 package facilitates through-hole mounting suitable for higher power dissipation scenarios. Consider the thermal resistance from junction to case when designing heat sinks for applications operating near the maximum 175°C junction temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's automotive-grade SiC MOSFET lineup. It is designed for high-efficiency power conversion systems requiring robust performance under extreme temperatures. The device integrates advanced SiC technology to minimize switching losses compared to traditional silicon counterparts.