Isolators - Gate Drivers IX3120GES product image

IX3120GES

  • Description:OPTOISO 3.75KV 1CH GATE DVR 8SMD
  • Series:-
  • Mfr:IXYS Integrated Circuits Division
  • Package:Tube

SKU:2cecc39e41dc Category: Brand:

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IX3120GES is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists IXYS Integrated Circuits Division. Its product description is OPTOISO 3.75KV 1CH GATE DVR 8SMD. Review the specifications below when checking this part for your BOM.

Isolators - Gate Drivers specifications for IX3120GES

  • Description:OPTOISO 3.75KV 1CH GATE DVR 8SMD
  • Series:-
  • Mfr:IXYS Integrated Circuits Division
  • Package:Tube
  • Technology:Optical Coupling
  • Number of Channels:1
  • Voltage - Isolation:3750Vrms
  • Propagation Delay tpLH / tpHL (Max):500ns, 500ns
  • Pulse Width Distortion (Max):300ns
  • Rise / Fall Time (Typ):100ns, 100ns
  • Current - Output High, Low:2A, 2A
  • Current - Peak Output:2.5A
  • Voltage - Forward (Vf) (Typ):1.24V
  • Voltage - Output Supply:15V ~ 30V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 100°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Gull Wing
  • Supplier Device Package:8-SMD
  • Common Mode Transient Immunity (Min):25kV/µs
  • Approval Agency:IEC/EN/DIN, UR
  • Current - DC Forward (If) (Max):20 mA

Isolators - Gate Drivers datasheet and documents for IX3120GES

IX3120GES

Isolators - Gate Drivers Overview

The IX3120GES is an optically isolated gate driver manufactured by IXYS Integrated Circuits Division. It features a single channel with 3.75 kVrms isolation voltage and operates in an 8-SMD package. The device provides a peak output current of 2.5 A, supporting both IGBT and SiC MOSFET applications. Electrical specifications include a supply voltage range of 15 V to 30 V, propagation delay of up to 500 ns, and rise/fall times of 100 ns. It functions as an inverting driver with a quiescent current of 4.5 mA and supports operating temperatures from -40°C to +100°C.

Isolators - Gate Drivers Feature Summary

  • Provides high-frequency gate driving capability for silicon carbide MOSFETs and high-power IGBTs
  • Features integrated bootstrap diode for high-side and low-side configurations
  • Offers 3.75 kVrms optical isolation for safety and noise immunity

Isolators - Gate Drivers Applications

  • Driving Silicon Carbide (SiC) MOSFETs
  • High-power IGBT switching circuits
  • Industrial power conversion systems

Isolators - Gate Drivers Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm specific suffix variations against official datasheets as they may indicate packaging or compliance differences. Check current distributor availability as stock levels are restricted. Ensure the received unit matches the 8-SMD package type and verify isolation ratings before integration into safety-critical designs.

Isolators - Gate Drivers Selection Notes

Select this component when high-speed switching with robust isolation is required for wide-bandgap devices. The integrated bootstrap diode simplifies circuit design for half-bridge applications. Consider the 2.5 A drive strength sufficient for moderate-power IGBTs and SiC MOSFETs. Evaluate thermal management requirements given the 800 mW power dissipation rating in the SMD package.

Isolators - Gate Drivers Part Context

The IX3120GES belongs to the IX3120 series of gate drivers designed for demanding power electronics environments. It is part of IXYS's portfolio focusing on reliable isolation and fast switching performance. This specific variant includes the IEC 60747-5-5 option, ensuring compliance with international safety standards for optocouplers used in industrial applications.

Isolators - Gate Drivers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, alternative sourcing requires verification of functional equivalence regarding isolation voltage, drive current, and pinout compatibility.

IX3120GESIX3120GES

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