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Product Detailed Parameters
- Description：IGBT PT 1200V 20A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 10A
- Power - Max：85 W
- Switching Energy：1.1mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 10A, 100Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXA12IF1200HB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features XPT technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C, with a derated rating of 13 A. The typical collector-emitter saturation voltage is 1.8 V. Maximum power dissipation is rated at 85 W, and the operating junction temperature range extends from -55°C to +150°C.
Feature Summary
- Utilizes IXYS XPT technology for optimized switching performance.
- Designed for high-voltage applications requiring robust thermal management.
- Single IGBT configuration with integrated anti-parallel diode characteristics.
Applications
- High-frequency power conversion circuits
- Motor control systems
- Industrial inverters
Procurement Notes
This component has reached End-of-Life status as indicated by manufacturer Product Change Notification documents dated March 7, 2025. Availability is restricted to existing stock or surplus channels. Verification of authenticity and storage conditions is critical due to the discontinued production status.
Selection Notes
Select this part for designs requiring a 1200V single IGBT in a TO-247-3 package. Note that the 20A rating applies only at 25°C case temperature; significant derating is required for higher thermal environments. Ensure gate drive voltages remain within the specified ±20 V limits to prevent device damage.
Part Context
The IXA12IF1200HB belongs to the IXA12IF1200 series of XPT IGBTs. It shares the same core semiconductor structure as the IXA12IF1200PB but utilizes a different package style (TO-247-3 versus TO-220-3). Both variants are discontinued products within the IXYS portfolio.
Replacement Considerations
No official direct substitutes are listed in the provided documentation. Designers should evaluate alternative 1200V/20A TO-247-3 IGBTs from other manufacturers, ensuring compatibility with switching speeds and thermal resistance parameters.
