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The IXA20I1200PZ-TRL is a single Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing XPT technology for high-voltage performance. It features a rated collector-emitter voltage of 1200 V and a continuous collector current of 38 A at 25°C. The device is housed in a surface-mount TO-263HV package, designed for efficient thermal management. Key electrical characteristics include a maximum power dissipation of 165 W and a gate-emitter voltage rating of ±20 V. This component is engineered for robust operation in demanding power electronics applications.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with required thermal and electrical specifications. Confirm that the TO-263HV package dimensions align with the target PCB footprint. Check for RoHS compliance status and any regional supply restrictions before finalizing procurement plans.
Select this IGBT for applications requiring high voltage isolation and efficient switching in compact designs. Consider the 165 W power dissipation limit and thermal resistance when designing heat sinks. Ensure gate drive circuits support the ±20 V rating and provide adequate current for fast switching transitions to minimize losses.
This component belongs to IXYS's discrete IGBT lineup, leveraging XPT (eXtended Plate Technology) to improve trade-offs between conduction and switching losses. It serves as a key building block for medium-power converters where reliability and thermal performance are critical constraints.
Direct substitutes may include other 1200 V, 38 A single IGBTs in TO-263HV packages from compatible manufacturers. Verify pinout compatibility, thermal resistance values, and switching speed parameters to ensure functional equivalence without circuit redesign.