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The IXA20RG1200DHG-TRR is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 43 A at 25°C. The device utilizes the ISOPLUS-SMPD surface-mount package, providing a power dissipation capacity of 147 W. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1 V at 25 A with a 15 V gate drive, a total gate charge of 76 nC, and switching times of 70 ns turn-on and 250 ns turn-off under standard test conditions.
Verify the specific suffix TRR against official datasheets to confirm tape-and-reel packaging requirements. Ensure compatibility with ISOPLUS-SMPD footprint dimensions during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to procurement.
Select this component for designs requiring high-voltage isolation in compact surface-mount configurations. Evaluate thermal resistance values relative to the intended heatsinking strategy. Compare gate charge specifications against available driver capabilities to optimize switching performance.
This IGBT belongs to the IXA series from IXYS, designed for high-power density applications. The ISOPLUS-SMPD package integrates the collector and emitter terminals for improved thermal conductivity compared to traditional leaded packages. It serves as a robust switching element in medium-power conversion systems.
Check for direct pin-compatible alternatives within the IXYS IXA family or other manufacturers offering ISOPLUS-SMPD packaged IGBTs. Verify that substitute devices match the 1200 V rating and 43 A current capacity. Ensure switching energy parameters align with existing circuit design margins.