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The IXA37IF1200HJ is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT GenX3 series. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 37A at 25°C, with a maximum rating of 58A. The device exhibits a typical collector-emitter saturation voltage of 1.8V and operates within a junction temperature range of -40°C to +125°C. Packaged in an ISOPLUS247-3 through-hole module, it dissipates up to 195W of power. Key electrical limits include ±20V gate-emitter voltage and 500nA leakage current.
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus channels. Engineering teams should initiate qualification processes for replacement parts immediately to ensure supply chain continuity for existing designs.
Select this IGBT when a 1200V blocking voltage and approximately 37A continuous current are required in a TO-247 compatible footprint. Ensure the application's thermal design can handle 195W dissipation at the expected duty cycle. Verify that the gate drive circuit supports the specified ±20V limits and that the operating junction temperature remains within the -40°C to +125°C range.
The IXA37IF1200HJ belongs to the IXYS IXA37IF1200 family of XPT IGBTs. These devices are engineered for medium-power applications requiring low conduction losses. The specific suffix 'HJ' denotes the package type and pin configuration standard for the ISOPLUS247-3 form factor used in this series.
As an EOL component, direct cross-replacement is not guaranteed. Evaluate alternatives from the same manufacturer's updated GenX3 portfolios or comparable 1200V XPT technologies from other vendors. Verify pin compatibility and thermal resistance parameters before substitution.