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Product Detailed Parameters
- Description：IGBT PT 1200V 9A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 3A
- Power - Max：45 W
- Switching Energy：400µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 3A, 330Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXA4IF1200TC-TUB is a discrete N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology to achieve a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 9 A at 25°C. The device features a TO-268AA surface-mount package with three pins, designed for efficient thermal management in compact circuits. Key electrical parameters include a maximum power dissipation of 45 W and a gate-emitter voltage rating of ±20 V. The component operates within a temperature range from -40°C to +125°C junction temperature.
Feature Summary
- XPT trench IGBT technology providing square reverse bias safe operating area
- Surface-mount TO-268AA package optimized for automated assembly
- High voltage blocking capability suitable for industrial switching applications
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix against official datasheets, as packaging variations may exist. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure supply chain channels provide genuine components to avoid counterfeit risks. Check for any recent product change notifications regarding pinout or material composition updates.
Selection Notes
Select this component for designs requiring low-current, high-voltage switching in surface-mount configurations. Evaluate thermal resistance requirements against the 45 W dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching speed. Consider the TO-268AA footprint compatibility with existing PCB layouts.
Part Context
This part belongs to the IXYS IXA series of XPT Gen5 IGBTs. These devices are engineered for efficiency and reliability in medium-power applications. The series emphasizes low conduction losses and robust short-circuit withstand capability, making it suitable for demanding power electronics environments.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 1200 V rating, 9 A current capacity, and TO-268AA package dimensions. Verify that alternative devices maintain compatible gate threshold voltages and thermal characteristics.
