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Product Detailed Parameters
- Description：IGBT PT 1200V 9A TO-252AA
- Series：-
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 3A
- Power - Max：45 W
- Switching Energy：400µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 3A, 330Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA
- Grade：-
- Qualification：-
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Overview
The IXA4IF1200UC-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and is housed in a surface-mount TO-252AA package. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 9 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a power dissipation rating of 45 W, and a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range of -40°C to +175°C.
Feature Summary
- XPT technology for optimized switching performance
- Surface-mount TO-252AA package design
- High thermal stability up to 175°C junction temperature
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'TRL' against official datasheets to confirm reel packaging specifications. Ensure compatibility with standard TO-252AA footprint requirements during PCB layout. Cross-reference RoHS compliance status with current manufacturer declarations before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high-voltage isolation in compact surface-mount designs. Evaluate thermal management needs based on the 45 W dissipation limit. Confirm that the 1200 V blocking capability meets system voltage requirements. Consider the 9 A current rating for load matching.
Part Context
This IGBT belongs to IXYS's discrete power transistor lineup, specifically designed for medium-power switching applications. The XPT technology distinguishes it from standard PT devices by offering improved trade-offs between conduction losses and switching speeds. It serves as a robust solution for modern power electronics where space constraints are critical.
Replacement Considerations
Direct substitutes may include other IXYS XPT series IGBTs in TO-252AA packages with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers. Check for updated product lifecycle notifications regarding discontinuation or form-fit-function changes.
