IXA55I1200HJ

$14.05

Description：IGBT PT 1200V 84A ISOPLUS247
Series：-

SKU:bd13fc80dd94 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 84A ISOPLUS247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：84 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：290 W
Switching Energy：4.5mJ (on), 5.5mJ (off)
Input Type：Standard
Gate Charge：190 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 50A, 15Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：ISOPLUS247™
Grade：-
Qualification：-

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IXA55I1200HJ

Overview

The IXA55I1200HJ is a single IGBT from the XPT series, manufactured by Littelfuse/IXYS. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 84 A. The device utilizes Extreme-light Punch-Through (XPT) technology for reduced thermal resistance. It is housed in an ISOPLUS247 package with a maximum gate-emitter voltage of ±20 V.

Feature Summary

Extreme-light Punch-Through (XPT) thin wafer technology
High-current handling capabilities
Low total energy losses
Low current fall times

Applications

Industrial motor drives
Power supplies
Inverters

Procurement Notes

Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm datasheet revisions match design requirements. Check RoHS compliance status. Ensure storage conditions adhere to semiconductor standards. Validate package integrity upon receipt.

Selection Notes

Select this component for applications requiring high-speed switching and low conduction losses. The 1200V rating suits medium-voltage systems. Consider thermal management due to power dissipation characteristics. Verify gate drive compatibility with the ±20V limit.

Part Context

Part of the IXYS XPT discrete IGBT family using GenX3 process technology. Designed for efficiency in power conversion. Competes with other high-voltage IGBTs in industrial markets.