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The IXA60IF1200NA is a single IGBT module manufactured by IXYS, utilizing XPT technology and silicon construction. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 88 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 500 nA. Power dissipation is rated at 290 W. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in an SOT-227B-4 package with screw mount installation style and a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix and manufacturing date code upon purchase. Confirm RoHS compliance status through official documentation as requirements may vary by region. Check for end-of-life notifications or discontinuation notices from the manufacturer before finalizing procurement plans. Ensure compatibility with existing thermal management solutions given the specified power dissipation ratings.
Select this component when a single high-voltage IGBT with moderate current capacity is required. The 1.2 kV rating suits medium-voltage applications. Consider the SOT-227B-4 package dimensions for PCB or chassis layout constraints. Evaluate thermal resistance requirements against the 290 W dissipation rating for adequate heat sinking design.
This part belongs to the IXYS IGBT module lineup featuring XPT technology. It serves as a discrete switching element for power electronics. The single configuration distinguishes it from six-pack modules. It targets applications requiring reliable high-voltage switching capabilities.
Publicly confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and electrical parameters if considering alternative manufacturers. Consult official replacement guides for discontinued series updates.