IXBF20N300

IXBF20N300

$37.53
  • Description:IGBT 3000V 34A ISOPLUS I4-PAC
  • Series:BIMOSFET™

SKU:39d07d72b133 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 3000V 34A ISOPLUS I4-PAC
  • Series:BIMOSFET™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):3000 V
  • Current - Collector (Ic) (Max):34 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 20A
  • Power - Max:150 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:105 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):1.35 µs
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:i4-Pac™-5 (3 Leads)
  • Supplier Device Package:ISOPLUS i4-PAC™
  • Grade:-
  • Qualification:-

Download product information

IXBF20N300

Overview

The IXBF20N300 is a high-voltage, high-frequency BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a silicon chip on a direct-copper bond substrate and provides electrical isolation of up to 4000V between the mounting surface and internal components. Designed for robust performance in demanding environments, it supports continuous collector currents and withstands high blocking voltages suitable for industrial power applications.

Feature Summary

  • Utilizes a silicon chip mounted on a direct-copper bond substrate for enhanced thermal management
  • Provides isolated mounting surface with high electrical isolation capabilities
  • Engineered for high-frequency operation with low gate drive requirements
  • Delivers high power density within a compact package design

Applications

  • Switch-mode and resonant-mode power supplies
  • Uninterruptible power supplies (UPS)
  • Laser generators
  • Capacitor discharge circuits
  • AC switches

Procurement Notes

Verify the specific datasheet version when sourcing, as manufacturing transitions may occur. Confirm that the component matches the original IXYS specifications rather than generic equivalents. Ensure the supplier provides traceable documentation confirming the device meets the required high-voltage isolation standards for your specific circuit design needs.

Selection Notes

Select this component for designs requiring high voltage blocking capability combined with fast switching speeds. The BiMOSFET technology offers advantages over standard IGBTs in terms of gate drive simplicity and frequency response. Consider the thermal resistance characteristics provided in the official datasheet to ensure adequate heat sinking for the intended power dissipation levels.

Part Context

This device belongs to the IXYS high-voltage power semiconductor portfolio, specifically utilizing BiMOSFET technology. It represents a class of monolithic transistors designed to bridge the gap between MOSFET ease of drive and bipolar current handling capabilities. The product line is targeted at industrial and commercial power conversion systems requiring reliability under high stress conditions.

Replacement Considerations

Cross-reference pinouts and thermal characteristics carefully. Verify that any substitute maintains the same 4000V isolation rating and package footprint. Check if alternative devices offer comparable switching speeds without exceeding the maximum gate-emitter voltage limits defined in the original specification.

IXBF20N300IXBF20N300
$37.53
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