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Product Detailed Parameters
- Description：IGBT 1600V 7A ISOPLUS I4-PAC
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1600 V
- Current - Collector (Ic) (Max)：7:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：7V @ 15V, 5A
- Power - Max：70 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：-
- Test Condition：960V, 5A, 27Ohm, 10V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXBF9N160G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in an ISOPLUS i4-PAC-3 surface-mount package. The device features a collector-emitter breakdown voltage of 1.6 kV and a continuous collector current rating of 7 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 4.9 V, a gate-emitter voltage range of -20 V to +20 V, and a threshold voltage of 2.5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 430 W.
Feature Summary
- High-voltage capability with a 1.6 kV collector-emitter breakdown voltage for robust performance in demanding circuits.
- Surface-mount construction using the ISOPLUS i4-PAC-3 package for efficient PCB integration.
- Single configuration designed for discrete switching applications requiring reliable isolation.
Applications
- High-voltage DC-DC converters
- Induction heating systems
- Uninterruptible Power Supply (UPS) units
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status via official documentation before procurement. Check for obsolescence notices as the product lifecycle may be limited. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.
Selection Notes
Select this component for designs requiring high blocking voltage in a compact surface-mount form factor. Evaluate thermal management requirements given the 4.9 V saturation voltage and 430 W power dissipation rating. Compare against alternative IGBTs if higher current ratings or different package styles are necessary for the specific application constraints.
Part Context
This part belongs to the IXYS discrete IGBT portfolio, specifically utilizing BIMOSFET technology. It represents a solution for medium-power, high-voltage switching needs where space efficiency is critical. The series focuses on providing reliable performance in industrial and consumer power electronics environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for equivalent high-voltage IGBTs in similar packages when sourcing alternatives.
