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Product Detailed Parameters
- Description：IGBT 3000V 34A TO-247HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：88 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 10A
- Power - Max：180 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：46 nC
- Td (on/off) @ 25°C：36ns/100ns
- Test Condition：960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：1.6 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247HV (IXBH)
- Grade：-
- Qualification：-
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Overview
The IXBH10N300HV is a high-voltage, high-gain BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a 3 kV collector-emitter breakdown voltage and operates with a continuous collector current of 10 A at 25°C. The device utilizes a TO-247HV-3 package for through-hole mounting. Key electrical characteristics include a maximum collector-emitter saturation voltage of 3.0 V at 15 V gate drive and 10 A collector current. It supports a junction temperature range from -55°C to +150°C and includes an integrated anti-parallel diode.
Feature Summary
- High gain structure providing enhanced switching performance
- Monolithic integration of IGBT and anti-parallel diode
- Robust thermal management via TO-247HV-3 package
Applications
- High voltage power supply circuits
- Industrial motor drives
- Inverter systems
Procurement Notes
Verify the specific suffix and revision level against the manufacturer datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability fluctuates. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components to electrostatic discharge during storage and installation.
Selection Notes
Select this component for applications requiring high blocking voltage and moderate current levels. The TO-247HV-3 package offers reliable thermal dissipation for through-hole implementations. Consider the saturation voltage and switching times when designing gate drive circuits to optimize efficiency. Verify that the thermal resistance parameters align with the system's heat sink capabilities under maximum operating conditions.
Part Context
This part belongs to IXYS' High Voltage, High Gain BiMOSFET family. These transistors are designed for demanding power electronics applications where high voltage isolation and efficient switching are critical. The series typically includes variants with different current ratings while maintaining similar voltage specifications and packaging styles for design flexibility.
Replacement Considerations
Direct substitutes within the same family include the IXBH12N300HV and IXBH14N300HV, which offer higher current ratings but share the same voltage class and package type. Cross-referencing with other manufacturers requires careful verification of pinout compatibility, thermal characteristics, and electrical limits to ensure functional equivalence.
