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Product Detailed Parameters
- Description：IGBT 3000V 50A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.35 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXBH20N300 is a high-voltage, single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the Very High Voltage series and utilizes Si technology in a TO-264-3 through-hole package. Key electrical parameters include a collector-emitter breakdown voltage of 3000V, a continuous collector current of 20A at 25°C, and a maximum power dissipation of 175W. The device features a typical saturation voltage of 3.8V at 20A and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High blocking voltage capability for demanding power applications
- Integrated BiMOSFET gate structure for improved switching performance
- Robust thermal design suitable for high-power density modules
Applications
- Induction heating systems
- High-frequency welding equipment
- Uninterruptible power supplies (UPS)
- Motor drive inverters
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure that the ordering suffix matches the required packaging configuration. Confirm that the component meets all relevant safety standards for the intended application environment. Cross-reference the part number against the latest Littelfuse/IXYS product change notices to avoid obsolete variants.
Selection Notes
Select this component for circuits requiring high voltage isolation and moderate current handling. Compare the saturation voltage and switching losses against alternative IGBTs in the same voltage class. Consider the thermal resistance characteristics when designing the heatsink interface. Evaluate the gate charge requirements to ensure compatibility with the available driver circuitry.
Part Context
This device is part of IXYS's portfolio of high-voltage power semiconductors, now under Littelfuse. It is designed for applications where space constraints are managed through efficient packaging while maintaining high voltage integrity. The TO-264-3 package provides a balance between thermal performance and mounting flexibility for industrial electronics.
Replacement Considerations
Potential substitutes include the IXBT20N300HV or IXBF20N300 from the same manufacturer family. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for any differences in switching speed or thermal characteristics that might impact the original circuit design.
