IXBH2N250

Overview

The IXYS IXBH2N250 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 13 A at 25°C, with a typical saturation voltage of 3.8 V. The device supports a power dissipation of 32 W and operates within a junction temperature range of -55°C to +150°C. Key electrical limits include a gate-emitter voltage range of ±20 V and a leakage current of 100 nA.

Feature Summary

• High-voltage blocking capability up to 2.5 kV for robust operation in demanding environments
• Single configuration designed for discrete switching applications
• Through-hole mounting via TO-247-3 package for secure mechanical attachment

Applications

• High-voltage power supply circuits
• Industrial motor drive inverters
• Resonant converter topologies

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before integration. Confirm that the TO-247-3 pinout matches the target PCB footprint design. Ensure thermal management solutions accommodate the 32 W power dissipation rating under expected operating conditions to maintain junction temperatures within the specified safe operating area.

Selection Notes

Select this component when a high-voltage IGBT with moderate current capacity is required for through-hole assembly. The 2.5 kV rating suits applications exceeding standard low-voltage limits. Compare the 3.8 V saturation voltage against system efficiency targets. Evaluate the 13 A continuous current limit against peak load requirements to ensure adequate headroom for transient events without exceeding thermal constraints.

Part Context

This device belongs to the IXYS high-voltage IGBT portfolio, utilizing silicon technology for power switching. It is part of a family of components designed for industrial and commercial power conversion systems. The TO-247-3 form factor provides a balance between thermal performance and ease of manual or automated insertion into printed circuit boards.

Replacement Considerations

Cross-reference with other IXYS single IGBTs in the TO-247-3 package offering similar 2.5 kV ratings. Verify compatibility of gate charge characteristics and saturation voltage levels with existing driver circuits. Ensure thermal resistance values align with the current heatsink design if substituting with devices from different manufacturers.