IXBH42N170

IXBH42N170

$20.79
  • Description:IGBT 1700V 80A TO-247AD
  • Series:BIMOSFET™

SKU:e9493f00fcc7 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1700V 80A TO-247AD
  • Series:BIMOSFET™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 42A
  • Power - Max:360 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:188 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):1.32 µs
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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IXBH42N170

Overview

The IXBH42N170 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the BIMOSFET series, manufactured by IXYS. It features a silicon technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 360 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • High blocking voltage capability for robust high-voltage switching applications
  • Low conduction losses compared to standard MOSFETs
  • MOS gate structure ensures drive simplicity and ease of integration

Applications

  • AC motor speed control systems
  • Uninterruptible power supplies (UPS)
  • Switched-mode and resonant-mode power supplies
  • Capacitor discharge circuits

Procurement Notes

Verify the specific datasheet version and RoHS compliance status prior to procurement, as environmental declarations may vary by production batch. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 360 W power dissipation rating under your operating conditions. Check for any recent product change notices regarding material or packaging updates.

Selection Notes

Select this component when a high-voltage, high-current IGBT with low conduction losses is required in a through-hole package. The 1.7 kV rating makes it suitable for medium-voltage industrial applications. Consider the 2.8 V saturation voltage for efficiency calculations. Compare against lower current variants like the IXBH16N170 if load requirements are smaller, or higher voltage options if system voltages exceed 1.7 kV.

Part Context

This part belongs to the IXYS BIMOSFET family, which combines bipolar transistor output characteristics with MOS gate input advantages. The IXBH series specifically targets high-power density applications requiring reliable switching performance. The TO-247-3 package provides isolated mounting capabilities, facilitating heat sink attachment with a single screw.

Replacement Considerations

The IXBH42N170A is listed as a similar part number within the same manufacturer's portfolio. Verify pinout compatibility and exact electrical parameter tolerances before substitution. No other direct cross-manufacturer equivalents are confirmed in the provided documentation.

IXBH42N170IXBH42N170
$20.79
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