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The IXBH42N170 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the BIMOSFET series, manufactured by IXYS. It features a silicon technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 360 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version and RoHS compliance status prior to procurement, as environmental declarations may vary by production batch. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 360 W power dissipation rating under your operating conditions. Check for any recent product change notices regarding material or packaging updates.
Select this component when a high-voltage, high-current IGBT with low conduction losses is required in a through-hole package. The 1.7 kV rating makes it suitable for medium-voltage industrial applications. Consider the 2.8 V saturation voltage for efficiency calculations. Compare against lower current variants like the IXBH16N170 if load requirements are smaller, or higher voltage options if system voltages exceed 1.7 kV.
This part belongs to the IXYS BIMOSFET family, which combines bipolar transistor output characteristics with MOS gate input advantages. The IXBH series specifically targets high-power density applications requiring reliable switching performance. The TO-247-3 package provides isolated mounting capabilities, facilitating heat sink attachment with a single screw.
The IXBH42N170A is listed as a similar part number within the same manufacturer's portfolio. Verify pinout compatibility and exact electrical parameter tolerances before substitution. No other direct cross-manufacturer equivalents are confirmed in the provided documentation.