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Product Detailed Parameters
- Description：IGBT 1700V 42A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：42 A
- Current - Collector Pulsed (Icm)：265 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 21A
- Power - Max：357 W
- Switching Energy：3.43mJ (on), 430µJ (off)
- Input Type：Standard
- Gate Charge：188 nC
- Td (on/off) @ 25°C：19ns/200ns
- Test Condition：850V, 21A, 1Ohm, 15V
- Reverse Recovery Time (trr)：330 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXBH42N170A is a single NPT silicon IGBT in the BIMOSFET series, housed in a TO-247-3 through-hole package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 42 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 6 V and supports a power dissipation of 357 W. Operating temperatures range from -55°C to +150°C junction temperature, with gate-emitter limits set at ±20 V.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust high-voltage performance.
- Integrates BiMOSFET structure combining MOS input control with bipolar output conductivity.
- Designed for high thermal stability within an industrial operating temperature range.
Applications
- Industrial motor drives
- High-frequency inverters
- Switch-mode power supplies
Procurement Notes
Verify component authenticity against official IXYS documentation before integration. Confirm RoHS compliance status via current datasheets as regulatory requirements evolve. Ensure ordering suffixes match specific packaging or testing variants if required by design specifications. Cross-reference pinouts with verified ECAD models to prevent mounting errors during assembly.
Selection Notes
Select this component for applications requiring high blocking voltage capability combined with moderate current handling. The TO-247-3 package facilitates efficient heat sinking for power management circuits. Evaluate switching energy losses against system efficiency targets. Ensure gate drive voltages remain within the specified ±20 V limits to maintain device integrity.
Part Context
This device belongs to the IXYS BIMOSFET family, which integrates MOS and bipolar technologies on a single chip. The series is engineered for high-power switching applications where fast turn-off characteristics and low conduction losses are critical. The TO-247-3 form factor provides a standardized footprint for thermal management in industrial electronics.
Replacement Considerations
Direct substitutes include IXBT16N170A and IXGH10N170A, though these offer lower current ratings. Verify pin compatibility and thermal resistance parameters when considering alternative packages such as D3PAK-3 for surface mount implementations.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 1.7 kV.
Does the device support surface mount installation?
No, the IXBH42N170A is designed for through-hole mounting in a TO-247-3 package.
What is the maximum junction temperature?
The maximum operating junction temperature is +150°C.
