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The IXYS IXBH6N170 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the BIMOSFET series. It features a 1700V collector-emitter breakdown voltage and a continuous collector current of 6A at 25°C. The device utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. Key electrical parameters include a maximum collector-emitter saturation voltage of 6V, a gate-emitter voltage range of -20V to +20V, and a power dissipation rating of 150W. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix or variant against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and REACH SVHC declarations prior to procurement. Check for any product change notices (PCN) that may affect pinout or electrical specifications. Ensure the supplier provides original manufacturer packaging to prevent counterfeit components.
Select this component for designs requiring moderate current handling with high voltage isolation. Compare the 6A continuous current rating against peak load requirements. Evaluate the 6V saturation voltage for conduction loss calculations. Consider the TO-247AD package for through-hole mounting constraints and thermal management needs relative to alternative surface-mount options.
This part belongs to the IXYS BIMOSFET family, which combines an IGBT chip with a fast recovery diode on a single substrate. This monolithic approach reduces parasitic inductance and simplifies circuit layout compared to discrete combinations. The series is designed for high-efficiency power conversion applications where compact size and reliable switching are critical.
Potential substitutes include the IXBH16N170 for higher current capacity or the IXBT16N170 for surface-mount compatibility. Verify that replacement parts match the 1700V rating and TO-247 package dimensions. Cross-reference datasheets for saturation voltage and switching speed differences to ensure circuit stability.