IXBK55N300

$85.86

Description：IGBT 3000V 130A TO-264AA
Series：BIMOSFET™

SKU:e400ab356e31 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 3000V 130A TO-264AA
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：3000 V
Current - Collector (Ic) (Max)：130 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 55A
Power - Max：625 W
Switching Energy：-
Input Type：Standard
Gate Charge：335 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：1.9 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264AA
Grade：-
Qualification：-

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IXBK55N300

Overview

The IXBK55N300 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS Very High Voltage series, utilizing BIMOSFET technology. It features a TO-264-3 through-hole package and supports a maximum collector-emitter voltage of 3 kV with a continuous collector current of 130 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.2 V and handles up to 625 W power dissipation. Operating temperatures range from -55°C to +150°C, with a gate-emitter voltage limit of ±25 V.

Feature Summary

High-voltage capability rated for 3 kV collector-emitter breakdown
BIMOSFET technology integration for optimized switching performance
Robust thermal management supporting 625 W power dissipation in TO-264-3 packages

Applications

High-voltage DC-DC converter circuits
Industrial motor drive systems
Power inverter topologies requiring high blocking voltage

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm RoHS and REACH compliance status via current datasheets. Ensure ordering suffixes match required packaging configurations. Validate that specific lot codes align with project reliability standards. Cross-reference electrical parameters with latest manufacturer revisions to avoid design discrepancies.

Selection Notes

Select this component for applications demanding extreme voltage isolation and moderate current handling. The TO-264-3 package facilitates efficient heat sinking for high-power density designs. Consider the 3.2 V saturation voltage when calculating conduction losses in high-current paths. Evaluate thermal resistance requirements carefully given the 625 W dissipation rating.

Part Context

This IGBT belongs to IXYS's Very High Voltage discrete transistor lineup, designed for specialized industrial and power conversion markets. The BIMOSFET architecture distinguishes it from standard planar devices by offering improved ruggedness. It serves as a critical switching element in systems where standard voltage ratings are insufficient for safe operation.