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Product Detailed Parameters
- Description：IGBT 1700V 200A TO-264AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：580 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 75A
- Power - Max：1040 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：350 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.5 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264AA
- Grade：-
- Qualification：-
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Overview
The IXYS IXBK75N170 is a BiMOSFET monolithic bipolar MOS transistor designed for high-power applications. It features an N-channel configuration with a maximum collector-emitter voltage of 1700 V and a continuous collector current rating of 75 A. The device utilizes a TO-264 package, providing robust thermal performance and mechanical stability. Key electrical parameters include a maximum saturation voltage of 3.1 V at rated conditions and a turn-off time of 840 ns. The component integrates an anti-parallel diode, enhancing its utility in circuits requiring freewheeling capabilities.
Feature Summary
- Monolithic integration of IGBT and anti-parallel diode within a single package
- High blocking voltage capability suitable for demanding power environments
- Low gate drive requirement facilitating efficient control circuitry design
- Standard international package dimensions for broad compatibility
Applications
- Capacitor discharge systems
- AC switches
- Switch-mode power supplies
- Resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific suffix designation to confirm exact electrical tolerances and packaging variations. Ensure the source document explicitly lists the part number as active or available. Cross-reference datasheet revisions to confirm parameter consistency. Confirm RoHS compliance status through official manufacturer documentation before procurement.
Selection Notes
Select this component for designs requiring high voltage isolation and integrated freewheeling functionality. The TO-264 package offers a balance between current handling and mounting flexibility. Evaluate thermal management requirements based on the specified saturation voltage and current ratings. Consider the switching speed characteristics when designing snubber circuits or high-frequency topologies.
Part Context
The IXBK75N170 belongs to the BiMOSFET family from IXYS, characterized by combining MOS input impedance with bipolar output conductivity. This architecture supports high power density and reliable operation in industrial power conversion. The series is engineered for applications where compact size and high efficiency are critical constraints.
Replacement Considerations
The IXBX75N170 is a documented variant within the same product family. Verify pinout compatibility and specific electrical parameter differences before substitution. Ensure thermal resistance values align with the existing heatsink design.
