IXBK75N170A

Description：IGBT 1700V 110A TO-264AA
Series：BIMOSFET™

SKU:c3137e9f6dd9 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1700V 110A TO-264AA
Series：BIMOSFET™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：110 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：6V @ 15V, 42A
Power - Max：1040 W
Switching Energy：3.8mJ (off)
Input Type：Standard
Gate Charge：358 nC
Td (on/off) @ 25°C：26ns/418ns
Test Condition：1360V, 42A, 1Ohm, 15V
Reverse Recovery Time (trr)：360 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264AA
Grade：-
Qualification：-

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IXBK75N170A

Overview

The IXBK75N170A is a BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features an integrated anti-parallel diode and is housed in the TO-264 package. The device supports a collector-emitter voltage of 1700 V and a continuous collector current of 75 A. The saturation voltage is specified at 3.1 V, with a turn-off time of 840 ns.

Feature Summary

Monolithic integration of IGBT and anti-parallel diode
High blocking voltage capability
High current handling capacity
Low gate drive requirement

Applications

Capacitor discharge circuits
AC switches
Switch-mode power supplies
Resonant-mode power supplies
UPS systems

Procurement Notes

Verify the specific suffix 'A' against the manufacturer datasheet to confirm pinout and electrical tolerances. Ensure the TO-264 package dimensions match the target PCB footprint. Confirm RoHS compliance status for the specific production batch before finalizing procurement orders.

Selection Notes

Select this component for high-voltage applications requiring integrated freewheeling functionality. The 1700V rating suits industrial inverters. Compare the 75A current limit against peak load requirements. Evaluate thermal management needs based on the 3.1V saturation voltage and package thermal resistance.

Part Context

This part belongs to the IXYS BiMOSFET family, combining MOS gate control with bipolar conduction. It replaces discrete IGBT-diode combinations, reducing board space. The series offers high power density and simplified driver design due to low gate charge characteristics typical of the BIMOSFET architecture.

Replacement Considerations

Check IXBX75N170A for identical specifications. Verify IXBK75N170 for potential minor parameter differences. Cross-reference IXBN75N170 for alternative packaging options.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.