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Product Detailed Parameters
- Description：IGBT 3600V 92A ISOPLUSI5-PAK
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3600 V
- Current - Collector (Ic) (Max)：92 A
- Current - Collector Pulsed (Icm)：720 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 60A
- Power - Max：417 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：450 nC
- Td (on/off) @ 25°C：50ns/340ns
- Test Condition：960V, 60A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：1.95 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：ISOPLUSi5-Pak™
- Supplier Device Package：ISOPLUSi5-Pak™
- Grade：-
- Qualification：-
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Overview
The IXBL60N360 is a silicon Insulated Gate Bipolar Transistor (IGBT) from the BIMOSFET family, manufactured by IXYS. It features a reverse-conducting configuration with a collector-emitter breakdown voltage of 3600V and a continuous collector current rating of 92A. The device utilizes ISOPLUS i5-PAC-3 packaging for through-hole mounting. Designed for high-voltage industrial applications, it integrates an anti-parallel diode to simplify circuit topology in hard-switching environments.
Feature Summary
- Reverse-conducting architecture integrating IGBT and anti-parallel diode
- High-voltage capability rated at 3600V
- ISOPLUS i5-PAC-3 package for robust thermal management
Applications
- High-voltage motor drives
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Industrial inverters
Procurement Notes
Verify the specific revision level against the manufacturer's datasheet before procurement, as suffixes may indicate manufacturing updates or minor parameter variations. Confirm that the ISOPLUS i5-PAC-3 footprint matches the target PCB design. Ensure compliance with RoHS directives if required by the end application specifications.
Selection Notes
Select this component for circuits requiring integrated reverse blocking or conduction to reduce component count. The 3600V rating suits medium-to-high voltage DC link applications. Evaluate thermal resistance requirements based on the ISOPLUS package capabilities and ensure gate drive voltages align with standard IGBT specifications.
Part Context
This part belongs to IXYS' BIMOSFET series, which combines IGBT and diode technologies in a single module. The IXBL series specifically targets high-voltage applications where space efficiency and reduced parasitic inductance are critical. It serves as a core switching element in power conversion stages.
Replacement Considerations
No direct public substitute part numbers are confirmed for this specific high-voltage reverse-conducting model. Designers should evaluate other IXYS BIMOSFET variants or comparable high-voltage IGBT/diode modules from alternative manufacturers, ensuring voltage and current ratings meet or exceed original specifications.
