IXBL64N250

Overview

The IXBL64N250 is a silicon-based Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an ISOPLUS i5-PAC-3 package designed for surface mount applications. The device operates with a maximum collector-emitter voltage of 2.5 kV and supports a continuous collector current of 64 A at 25°C. It includes an integrated anti-parallel diode within a half-bridge configuration. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 300 W. The component functions reliably within a temperature range of -55°C to +150°C.

Feature Summary

• Monolithic integration of IGBT and anti-parallel diode in a single half-bridge structure
• High blocking voltage capability suitable for demanding power switching environments
• Low gate drive requirement enabling efficient control circuitry design
• Direct copper bond substrate construction for enhanced thermal performance

Applications

• Switch-mode and resonant-mode power supplies
• Uninterruptible power supplies (UPS)
• Capacitor discharge circuits
• Laser generators

Procurement Notes

Verify the specific manufacturer datasheet for the IXBL64N250 to confirm current RoHS compliance status and REACH SVHC declarations before integration. Ensure that the ISOPLUS i5-PAC-3 package footprint matches the target PCB layout exactly. Cross-reference the thermal resistance values provided in the official documentation against the system's heat sinking capabilities to guarantee safe operating temperatures under maximum load conditions.

Selection Notes

Select this component when a high-voltage half-bridge solution is required in a compact surface-mount form factor. The 2.5 kV rating makes it appropriate for medium-voltage industrial applications. Consider the 64 A current capacity and 300 W power dissipation limits relative to the expected duty cycle and ambient cooling conditions. The integrated diode simplifies circuit topology compared to discrete parallel arrangements.

Part Context

This device belongs to IXYS' BIMOSFET family of monolithic bipolar MOS transistors. These components combine the fast switching characteristics of MOS technology with the low conduction losses of bipolar devices. The IXBL series specifically targets high-power density applications requiring robust isolation and high voltage handling in a standardized package format widely used in industrial power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative IXYS models such as the IXBK64N250 or IXBH series only if their datasheets explicitly confirm pin-to-pin equivalence and identical electrical specifications.