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Product Detailed Parameters
- Description：IGBT MOD 1700V 145A 625W SOT227B
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：145 A
- Power - Max：625 W
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：6.93 nF @ 25 V
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Overview
The IXBN75N170 is a high-voltage N-channel IGBT manufactured by IXYS, belonging to the BiMOSFET monolithic bipolar MOS transistor family. It features an integrated anti-parallel diode and is housed in a standard TO-247 package. Key electrical parameters include a collector-emitter voltage (V_CES) of 1700 V and a continuous collector current (I_C) of 75 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage (V_CE(sat)) of 3.1 V and a rated turn-off time of 840 ns. It supports a power dissipation of 360 W with a junction temperature range from -55°C to +150°C.
Feature Summary
- Monolithic integration of IGBT and anti-parallel diode for compact design
- High blocking voltage capability suitable for demanding power applications
- Standard international package format for easy mounting
Applications
- Switch-mode and resonant-mode power supplies
- Uninterruptible power systems (UPS)
- AC motor drives
- Capacitor discharge circuits
- AC switches
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified agents. Confirm RoHS compliance status and specific manufacturing date codes against current supply chain requirements. Ensure packaging integrity matches project specifications before acceptance testing.
Selection Notes
Select this component for designs requiring 1700 V isolation with moderate switching speeds. The integrated diode simplifies circuit topology compared to discrete solutions. Evaluate thermal management needs based on the 360 W dissipation rating and ensure gate drive voltages remain within the specified ±20 V limits for reliable operation.
Part Context
The IXBN75N170 is part of IXYS's BiMOSFET series, designed to offer high power density and low gate drive requirements. This series targets industrial power conversion where reliability under high voltage stress is critical. The component represents a balance between conduction losses and switching performance for medium-frequency applications.
Replacement Considerations
Direct substitutes include IXBX75N170 and IXBK75N170, which share identical electrical characteristics and pinouts. Verify package compatibility and thermal resistance values when transitioning between these variants to ensure system performance remains unchanged.
