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Product Detailed Parameters
- Description：IGBT 3000V 38A TO-268HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：38 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 14A
- Power - Max：200 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：-
- Test Condition：960V, 14A, 20Ohm, 15V
- Reverse Recovery Time (trr)：1.4 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXBT)
- Grade：-
- Qualification：-
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Overview
The IXBT14N300HV is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-268HV (D3PAK-3) surface-mount package designed for robust thermal performance. The device supports a collector-emitter voltage of 3 kV and operates with a continuous collector current of 14 A at 25°C. Key electrical parameters include a saturation voltage of 2.2 V, a maximum power dissipation of 200 W, and a gate-emitter voltage range of -20 V to +20 V. It functions within a temperature range of -55°C to +150°C.
Feature Summary
- High blocking voltage capability up to 3 kV for demanding power applications
- Integrated anti-parallel diode for efficient switching operations
- Low conduction losses optimized for high power density designs
- Surface-mount construction in a thermally efficient TO-268HV package
Applications
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
- AC switches
Procurement Notes
Verify the specific suffix codes on the component marking against the official IXYS datasheet to confirm exact electrical tolerances and packaging variations. Ensure the procurement source provides valid traceability documentation. Confirm RoHS compliance status directly from the manufacturer's latest release notes before integration into production lines.
Selection Notes
Select this component when a 3 kV rating is required in a surface-mount form factor. Compare the 2.2 V saturation voltage against alternative packages to evaluate thermal management needs. Consider the 14 A continuous current limit relative to the expected load profile and ambient operating temperatures to ensure reliable long-term operation without exceeding power dissipation limits.
Part Context
This part belongs to the IXYS Very High Voltage series, utilizing BiMOSFET technology. It complements other high-voltage IGBTs like the IXBH14N300HV but offers a distinct surface-mount footprint. The series targets industrial and commercial power conversion systems requiring high reliability and compact design solutions.
Replacement Considerations
Direct substitutes include the IXBA14N300HV and IXBH14N300HV. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement maintains the 3 kV blocking voltage and similar saturation characteristics for circuit integrity.
