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Product Detailed Parameters
- Description：IGBT 1700V 16A TO-268HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 10A
- Power - Max：150 W
- Switching Energy：2.5mJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：15ns/250ns
- Test Condition：1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXBT)
- Grade：-
- Qualification：-
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Overview
The IXBT16N170AHV is a high-voltage N-channel MOSFET manufactured by IXYS. It utilizes silicon technology and features the BIMOSFET trademark design. The component is housed in a D2PAK-3 (TO-263-3) surface-mount package with three terminals. Key electrical specifications include a drain-source breakdown voltage of 1.7 kV and a continuous drain current of 16 A. The gate-source voltage limits are defined as -20 V to +20 V, with a threshold voltage of 2.5 V. Gate charge is specified at 65 nC. The device supports a maximum power dissipation of 150 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with 1.7 kV drain-source breakdown rating for robust switching applications.
- Single-channel enhancement mode N-Channel configuration for standard control logic integration.
- Surface-mount D2PAK-3 packaging designed for automated assembly and thermal management.
Applications
- High-voltage DC-DC converter circuits
- Induction heating systems
- Motor drive inverters
Procurement Notes
Verify the exact part number against official manufacturer documentation, as the specific suffix HV may denote specialized variants not fully detailed in general catalogs. Confirm RoHS compliance status and REACH SVHC declarations directly from the supplier's technical data sheet prior to procurement. Ensure the ordering suffix matches the required package and terminal finish specifications.
Selection Notes
Select this component when a single N-channel MOSFET with 1.7 kV blocking capability is required in a TO-263 form factor. Compare the 16 A continuous current rating and 150 W power dissipation against circuit load requirements. Evaluate the 65 nC gate charge for driver compatibility and switching speed needs relative to alternative IGBTs or superjunction MOSFETs in the same voltage class.
Part Context
This component belongs to the IXYS BIMOSFET family, which integrates high-voltage MOSFET technology. It serves as a discrete switching element within power electronics assemblies. The TO-263-3 package provides a balance between current handling capacity and board space efficiency compared to through-hole alternatives like TO-247.
Replacement Considerations
Publicly confirmed substitute part numbers for IXBT16N170AHV were not identified in the provided source material. Cross-referencing requires matching 1.7 kV, 16 A, and TO-263-3 specifications from other manufacturers.
